{"schema_version":1,"experiment_id":"course-03/photosensor","review_date":"2026-10-16","access_channel":"官方器件资料，补充两校学术检索","verification_method":"下载完整官方PDF，核读器件条件与图3，同源参数独立KCL计算验证。","references":[{"id":"VishayBPW34Doc81521","title":"BPW34, BPW34S Silicon PIN Photodiode","authors":["Vishay Semiconductors"],"document_number":"81521","revision":"2.1","revision_date":"2011-08-23","year":2011,"url":"https://www.vishay.com/docs/81521/bpw34.pdf","source_pdf":{"sha256":"848a480a7dabad95338765a9d6646ca25223db77c4f426aa5218eb7778687c65","pages":5,"bytes":113384},"locators":[{"pdf_pages":[1],"location":"Features","role":"受光面积7.5mm²"},{"pdf_pages":[2],"location":"Basic Characteristics: Reverse Light Current","role":"25℃、λ950nm、VR5V、Ee1mW/cm²下典型50μA/最低40μA"},{"pdf_pages":[2],"location":"Reverse Dark Current","role":"暗电流行条件VR10V，未作为5V点参数"},{"pdf_pages":[3],"location":"Fig.3 Reverse Light Current vs.Irradiance","role":"λ950nm、VR5V下近线性趋势"}],"application":"固定950nm、5V、25℃的比例响应教学场景；理想TIA线性域内保持偏压，独立暗零点校正。","scope":"典型器件点和理想线性延拓；不保证单颗校准精度，不外推波长、温度或光谱照度转换。","review_findings":["末页附加2026法律通知不改变器件正文2011修订身份。","10V暗电流条件与5V光电流条件不同，明确分开。"],"review_status":"full_text_reviewed"}]}